| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reynolds, Steve
University of Dundee
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2019A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors
- 2017Photoconductivity in Materials Researchcitations
- 2014Electronic properties of undoped microcrystalline silicon oxide filmscitations
- 2012Properties of thin-film silicon solar cells at very high irradiancecitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2010Excimer laser wet oxidation of hydrogenated amorphous siliconcitations
- 2010Measurement and modelling of transport in amorphous semiconductorscitations
- 2009Carrier mobility and density of states in microcrystalline silicon film compositions, probed using time-of-flight photocurrent spectroscopy
- 2005Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors
- 2004Decay from steady-state photocurrent in amorphous semiconductorscitations
- 2003Analysis and modelling of generation-recombination noise in amorphous semiconductorscitations
- 2002Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopycitations
- 2002Transient decay from the steady-state in microcrystalline silicon
- 2001Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filamentscitations
- 2001Generation-recombination noise in amorphous semiconductorscitations
- 2000Improved high resolution post-transit spectroscopy for determining the density of states in amorphous semiconductors
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article
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>
Abstract
<jats:p>The optical absorption coefficient is one of the fundamental properties of semiconductors and is critical to the development of optical devices. Herein, a revival of the constant photocurrent method is presented to measure sub‐bandgap absorption in wide bandgap semiconductor films. The method involves maintaining a constant photocurrent by continually adjusting the impinging photon flux across the energy spectrum. Under such conditions, the reciprocal of the photon flux for uniformly absorbed light is proportional to the absorption coefficient. This method is applied to α‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and reveals that it can access the absorption coefficient from 1 × 10<jats:sup>5</jats:sup> cm<jats:sup>−1</jats:sup> at the band edge (5.3 eV) to 0.8 cm<jats:sup>−1</jats:sup> close to mid‐bandgap (2.7 eV). Changes in the steepness of the absorption curve in the sub‐bandgap region are in excellent agreement with defect states of α‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> reported by deep level transient spectroscopy, indicating that the technique shows promise as a probe of energetically distributed defect states in thin film wide bandgap semiconductors.</jats:p>