| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Roberts, Joseph
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020(Invited) Band Line-up of High-k Oxides on GaN
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitorscitations
- 2018Band alignments at Ga2O3 heterojunction interfaces with Si and Gecitations
- 2018Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by <i>in-situ</i> fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
- 2016Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)<i>x</i>(Al2O3)1−<i>x</i> as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistorscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
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article
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>
Abstract
<jats:p>The optical absorption coefficient is one of the fundamental properties of semiconductors and is critical to the development of optical devices. Herein, a revival of the constant photocurrent method is presented to measure sub‐bandgap absorption in wide bandgap semiconductor films. The method involves maintaining a constant photocurrent by continually adjusting the impinging photon flux across the energy spectrum. Under such conditions, the reciprocal of the photon flux for uniformly absorbed light is proportional to the absorption coefficient. This method is applied to α‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and reveals that it can access the absorption coefficient from 1 × 10<jats:sup>5</jats:sup> cm<jats:sup>−1</jats:sup> at the band edge (5.3 eV) to 0.8 cm<jats:sup>−1</jats:sup> close to mid‐bandgap (2.7 eV). Changes in the steepness of the absorption curve in the sub‐bandgap region are in excellent agreement with defect states of α‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> reported by deep level transient spectroscopy, indicating that the technique shows promise as a probe of energetically distributed defect states in thin film wide bandgap semiconductors.</jats:p>