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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tegenkamp, Christoph
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Magnetic Resonance Imaging-Based Monitoring of the Accumulation of Polyethylene Terephthalate Nanoplastics
- 2024Bi₁₂Rh₃Cu₂I₅: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channelscitations
- 2024Anchoring AtomicallyPrecise Chiral Bismuth OxidoNanoclusters on Gold: The Role of Amino Acid Linkers
- 2022Bi12Rh3Cu2I5citations
- 2022Periodic Nanoarray of Graphene pn-Junctions on Silicon Carbide Obtained by Hydrogen Intercalationcitations
- 2021Atomic layer deposition onto fabrics of carbon and silicon carbide fibers : Preparation of multilayers comprising alumina, titania-furfuryl alcohol hybrid, and titanium phosphatecitations
- 2020Substrate induced nanoscale resistance variation in epitaxial graphenecitations
- 2020Substrate induced nanoscale resistance variation in epitaxial graphene
- 2020The di(thiourea)gold(I) complex [Au{S=C(NH2)2}2][SO3Me] as a precursor for the convenient preparation of gold nanoparticlescitations
- 2020Graphene Nanoplatelet (GNPs) Doped Carbon Nanofiber (CNF) System: Effect of GNPs on the Graphitic Structure of Creep Stress and Non-Creep Stress Stabilized Polyacrylonitrile (PAN)
- 2020The Weak 3D Topological Insulator Bi12Rh3Sn3I9
- 2018Electrospun Polyacrylonitrile Based Carbon Nanofibers: The Role of Creep Stress towards Cyclization and Graphitization
- 2017Spin-resolved band structure of a densely packed Pb monolayer on Si(111)
- 2017Tuning the conductivity along atomic chains by selective chemisorption
- 2016Amorphous, turbostratic and crystalline carbon membranes with hydrogen selectivitycitations
- 2015Origin of metallicity in atomic Ag wires on Si(557)
- 2015The 100th anniversary of the four-point probe technique: the role of probe geometries in isotropic and anisotropic systems
- 2011Plasmons in Pb nanowire arrays on Si(557): Between one and two dimensions
- 2010Plasmon damping below the Landau regime: the role of defects in epitaxial graphene
- 2010Magnetotransport in anisotropic Pb films and monolayers
- 2009Graphitization process of SiC(0001) studied by electron energy loss spectroscopy
- 2006Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)
- 2004Roughness and stability of silicon on insulator surfaces
- 2003Restructuring of the Ge(100) surface by Na chains
- 2003Formation of surface color centers at differently coordinated sites: MgO/Ag(1,1,19)
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article
Bi12Rh3Cu2I5
Abstract
<p>Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation-free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi<sub>14</sub>Rh<sub>3</sub>I<sub>9</sub>, the first weak 3D TI, topology presumably arises from stacking of the intermetallic [(Bi<sub>4</sub>Rh)<sub>3</sub>I]<sup>2+</sup> layers, which are predicted to be 2D TIs and to possess protected edge-states, separated by topologically trivial [Bi<sub>2</sub>I<sub>8</sub>]<sup>2−</sup> octahedra chains. In the new layered salt Bi<sub>12</sub>Rh<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>, the same intermetallic layers are separated by planar, i.e., only one atom thick, [Cu<sub>2</sub>I<sub>4</sub>]<sup>2−</sup> anions. Density functional theory (DFT)-based calculations show that the compound is a weak 3D TI, characterized by (Formula presented.), and that the topological gap is generated by strong spin–orbit coupling (E <sub>g,calc.</sub> ∼ 10 meV). According to a bonding analysis, the copper cations prevent strong coupling between the TI layers. The calculated surface spectral function for a finite-slab geometry shows distinct characteristics for the two terminations of the main crystal faces ⟨001⟩, viz., [(Bi<sub>4</sub>Rh)<sub>3</sub>I]<sup>2+</sup> and [Cu<sub>2</sub>I<sub>4</sub>]<sup>2−</sup>. Photoelectron spectroscopy data confirm the calculated band structure. In situ four-point probe measurements indicate a highly anisotropic bulk semiconductor (E <sub>g,exp.</sub> = 28 meV) with path-independent metallic conductivity restricted to the surface as well as temperature-independent conductivity below 60 K.</p>