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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Finzel, Kati
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Bi₁₂Rh₃Cu₂I₅: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channelscitations
- 2023Bismuth-Rich Intermetallic Rods with a Note of Zintl-Phasecitations
- 2023Unconventional Spin State Driven Spontaneous Magnetization in a Praseodymium Iron Antimonidecitations
- 2022Bi12Rh3Cu2I5citations
- 2022Design of High-Temperature Syntheses on the Example of the Heavy-Atom Cluster Compound Sn[PtBi6I12]citations
- 2021Formation of Bi2Ir nanoparticles in a microwave-assisted polyol process revealing the suboxide Bi4Ir2Ocitations
- 2021Pb[PtBi6I12] – Infinite Chains of Heavy Atom Clusterscitations
- 2021Formation of Bi$_2$Ir nanoparticles in a microwave-assisted polyol process revealing the suboxide Bi$_4$Ir$_2$Ocitations
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article
Bi12Rh3Cu2I5
Abstract
<p>Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation-free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi<sub>14</sub>Rh<sub>3</sub>I<sub>9</sub>, the first weak 3D TI, topology presumably arises from stacking of the intermetallic [(Bi<sub>4</sub>Rh)<sub>3</sub>I]<sup>2+</sup> layers, which are predicted to be 2D TIs and to possess protected edge-states, separated by topologically trivial [Bi<sub>2</sub>I<sub>8</sub>]<sup>2−</sup> octahedra chains. In the new layered salt Bi<sub>12</sub>Rh<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>, the same intermetallic layers are separated by planar, i.e., only one atom thick, [Cu<sub>2</sub>I<sub>4</sub>]<sup>2−</sup> anions. Density functional theory (DFT)-based calculations show that the compound is a weak 3D TI, characterized by (Formula presented.), and that the topological gap is generated by strong spin–orbit coupling (E <sub>g,calc.</sub> ∼ 10 meV). According to a bonding analysis, the copper cations prevent strong coupling between the TI layers. The calculated surface spectral function for a finite-slab geometry shows distinct characteristics for the two terminations of the main crystal faces ⟨001⟩, viz., [(Bi<sub>4</sub>Rh)<sub>3</sub>I]<sup>2+</sup> and [Cu<sub>2</sub>I<sub>4</sub>]<sup>2−</sup>. Photoelectron spectroscopy data confirm the calculated band structure. In situ four-point probe measurements indicate a highly anisotropic bulk semiconductor (E <sub>g,exp.</sub> = 28 meV) with path-independent metallic conductivity restricted to the surface as well as temperature-independent conductivity below 60 K.</p>