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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hounkpati, Viwanou
Université de Caen Normandie
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2022Stress relaxation in III-V nitrides: investigation of metallic atoms interaction with the N-vacancycitations
- 2019Misorientation dependence grain boundary complexions in <111> symmetric tilt Al grain boundariescitations
- 2018A Theoretical Investigation of the Miscibility and Structural Properties of In x Al y Ga 1−x−y N Alloyscitations
- 2014Influence of Morphological Texture on Stresses Analysis by X-Ray and Neutron Diffraction: Accounting for Extreme Morphologies
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article
A Theoretical Investigation of the Miscibility and Structural Properties of In x Al y Ga 1−x−y N Alloys
Abstract
International audience ; In this theoretical investigation of the miscibility in quaternary alloys, we stay in the regular solution model and determine the interaction parameters from the enthalpy of mixing calculated using a modified Stillinger–Weber (SW) potential for III‐nitride ternary alloys. From our calculation, the values of the interaction parameters are 6.605, 10.523, and 0.677 kcal mol−1, respectively, for InGaN, InAlN, and AlGaN at x = 0.5 (where x is the In and Al fraction in InGaN, InAlN, and AlGaN, respectively). These values are in good agreement with those predicted by the improved delta lattice parameter (DLP) model for nitride ternary alloys. To determine the unstable regions characterized by the spinodal decomposition of the quaternary alloy InxAlyGa1−x−yN, we consider the composition ranges of 0.06 ≤ x ≤ 1 and 0 ≤ y ≤ 0.94. Our calculations show that the phase separation temperature increases with the increase of indium concentration. For In concentration lower than 9.4%, the quaternary alloy is miscible independent of the Al and Ga compositions in the usual growth temperature range for metalorganic vapor phase epitaxy.