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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Frentrup, Martin
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Topics
Publications (19/19 displayed)
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2023Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVDcitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayerscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substratescitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEMcitations
- 2017Photoluminescence studies of cubic GaN epilayerscitations
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2015Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
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article
Photoluminescence studies of cubic GaN epilayers
Abstract
The luminescence properties of cubic GaN films grown upon 3C-SiC/Si (001) substrates by MOCVD were investigated. The spectra show luminescence peaks which are associated with donor bound exciton recombination and donor acceptor pair recombination. A reduced peak energy for the D0X emission compared values reported in the literature suggests a tensile-strain-reduced<br/>bandgap of approximately 3.27 eV, which is consistent with the absorption edge in photoluminescence excitation spectroscopy. The presence of hexagonal material introduces a broad emission band at 3.40 eV with a FWHM of 190 meV, extending to energies up to 3.60 eV. The intensity of this emission scales linearly with excitation power, its peak energy and width remaining unchanged. This band is associated with an absorption edge below 3.70 eV and therefore is not caused by absorption into phase-pure cubic or hexagonal GaN. The photoluminescence lifetimes measured across this band reduce from 0.40 ns to 0.20 ns with increasing emission energy. All these observations can be explained by considering a type-II-band alignment adjacent to stacking faults within the cubic GaN.