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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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Strassburg, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 20183D GaN Fins as a Versatile Platform for a-Plane-Based Devices
- 2016The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structurescitations
- 2016Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structurescitations
- 2015Rapid prototyping of reflectors for vehicle lighting using laser activated remote phosphor
- 2014Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDscitations
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article
Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures
Abstract
<jats:title>Abstract</jats:title><jats:sec><jats:label /><jats:p>Piezoelectric and spontaneous polarization play an essential role in GaN‐based devices. InGaN quantum wells (QWs) in GaN host material, especially grown along the polar <jats:italic>c</jats:italic>‐direction, exhibit strong internal fields in the QW region due to the indium‐induced strain. An exact knowledge of the electric fields is essential, since they are one of the factors limiting the performance of green LDs and LEDs. Differential phase contrast in a scanning transmission electron microscope enables direct, local, and quantitative measurements of these electric fields. For a multi‐QW sample, it was possible to determine the piezoelectric field in the range of 43–67 MV m<jats:sup>−1</jats:sup> with a resolution of 10 MV m<jats:sup>−1</jats:sup> (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552288-math-0002.png" xlink:title="urn:x-wiley:15213951:media:pssb201552288:pssb201552288-math-0002" /> 10 mV nm<jats:sup>−1</jats:sup>).</jats:p></jats:sec>