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Mehrtens, Thorsten
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Publications (5/5 displayed)
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2016Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
- 2016Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structurescitations
- 2015Homogeneity and composition of AlInGaN: A multiprobe nanostructure studycitations
- 2014Quantitative Strain and Compositional Studies of In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniquescitations
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article
Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures
Abstract
<jats:title>Abstract</jats:title><jats:sec><jats:label /><jats:p>Piezoelectric and spontaneous polarization play an essential role in GaN‐based devices. InGaN quantum wells (QWs) in GaN host material, especially grown along the polar <jats:italic>c</jats:italic>‐direction, exhibit strong internal fields in the QW region due to the indium‐induced strain. An exact knowledge of the electric fields is essential, since they are one of the factors limiting the performance of green LDs and LEDs. Differential phase contrast in a scanning transmission electron microscope enables direct, local, and quantitative measurements of these electric fields. For a multi‐QW sample, it was possible to determine the piezoelectric field in the range of 43–67 MV m<jats:sup>−1</jats:sup> with a resolution of 10 MV m<jats:sup>−1</jats:sup> (<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201552288-math-0002.png" xlink:title="urn:x-wiley:15213951:media:pssb201552288:pssb201552288-math-0002" /> 10 mV nm<jats:sup>−1</jats:sup>).</jats:p></jats:sec>