• Riechert, Henning
• Wehmann, Hergo-Heinrich
• Fündling, Sönke
• Trampert, Achim
• Merzsch, Stephan
• Li, Shunfeng
• Lähnemann, Jonas
• Waag, Andreas
• Bakin, Andrey
• Sökmen, Ünsal
• Jahn, Uwe
• Behrends, Arne
• Al-Suleiman, Mohamed Aid Mansur

Abstract

GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self- organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures....

Topics

• microstructure
• polymer
• phase
• x-ray diffraction
• semiconductor
• carbide
• Silicon
• defect