| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Waag, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2021Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition
- 2021Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chipscitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicscitations
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 20183D GaN Fins as a Versatile Platform for a-Plane-Based Devices
- 2017Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.citations
- 2016The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structurescitations
- 2010GaN and ZnO nanostructurescitations
- 2001BeCdSe as a ternary alloy for blue-green optoelectronic applicationscitations
- 2001Spin Manipulation Using Magnetic II–VI Semiconductorscitations
- 2000Semimagnetic Resonant Tunneling Diodes for Electron Spin Manipulation
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article
GaN and ZnO nanostructures
Abstract
GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self- organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures....