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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Watson, Ian
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2020Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate
- 2017Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodescitations
- 2017The impact of biomass feedstock composition and pre-treatments on tar formation during biomass gasification
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2012Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameterscitations
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Free-standing light-emitting organic nanocomposite membranes
- 2009White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structurescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfercitations
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Probing bulk and surface damage in widegap semiconductorscitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties
Abstract
<p>High quality Al1-xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x = 0.13 to 0.24. Up to x = 0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smooth surface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, the mechanisms leading to relaxation of compressive strain are very different in the two samples grown both at similar temperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneously distributed with depth. The other sample started to grow with x = 0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x similar to 0.17. Both samples have an increased surface roughness. All samples show strong Al1-xInxN band edge luminescence with large bowing parameter and Stokes' shifts. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</p>