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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Martin, Robert
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (35/35 displayed)
- 2024Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysiscitations
- 2021Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectorscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxycitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaNcitations
- 2019Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDscitations
- 2017Charge carrier localised in zero-dimensional (CH 3 NH 3 ) 3 Bi 2 1 9 clusterscitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusterscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Reprint of
- 2016RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystalscitations
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2016Self-healing thermal annealingcitations
- 2016Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDscitations
- 2014Effect of mechanical compression on Cu(In,Ga)Se filmscitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2012Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameterscitations
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
- 2005Growth mechanism, microstructure, EPMA and Raman studies of pulsed laser deposited Nd1-xBa2+xCu3O7-delta thin filmscitations
- 2005Preparation of Cu(In,Ga)Se-2 thin film solar cells by two-stage selenization processes using N-2 gascitations
- 2005Studies of growth, microstructure, IMP Raman spectroscopy and annealing effect of pulsed laser deposited Ca-doped NBCO thin filmscitations
- 2005Selectively excited photoluminescence from Eu- implanted GaNcitations
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties
Abstract
<p>High quality Al1-xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x = 0.13 to 0.24. Up to x = 0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smooth surface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, the mechanisms leading to relaxation of compressive strain are very different in the two samples grown both at similar temperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneously distributed with depth. The other sample started to grow with x = 0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x similar to 0.17. Both samples have an increased surface roughness. All samples show strong Al1-xInxN band edge luminescence with large bowing parameter and Stokes' shifts. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</p>