| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Halsall, Mp
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Publications (8/8 displayed)
- 2021Passivation of thermally-induced defects with hydrogen in float-zone siliconcitations
- 2018Graphene oxide films for field effect surface passivation of silicon for solar cellscitations
- 2018Deep-level analysis of passivation of transition metal impurities in siliconcitations
- 2013Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generationcitations
- 2013Size limit on the phosphorous doped silicon nanocrystals for dopant activationcitations
- 2010Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processingcitations
- 2010Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescencecitations
- 2001Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopycitations
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article
Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescence
Abstract
The X-ray absorption near edge structure (XANES) and X-ray excited optical luminescence (XEOL) of a set of photoluminescent rare earth (RE) (Tb, Ce) doped silicon oxide (SiOx) thin films, having compositions ranging from O-rich (32% Si) to Si-rich (36% Si), were analyzed at the Si and O K-edges. The results show that luminescence from these materials is correlated with the excitation of O-related energy states, and demonstrate that the composition and bonding structure of the silicon oxide host matrix play an active role in determining the luminescent properties of these materials, although the microstructure of the films may vary from filmto film. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.