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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shan, W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Diluted ZnMnTe oxidecitations
- 2004Synthesis and properties of highly mismatched II-O-VI alloyscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Synthesis and optical properties of II-O-VI highly mismatched alloyscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
- 2000Effect of nitrogen on the band structure of III-N-V alloys
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article
Oxygen induced band-gap reduction in ZnOxSe1-x alloys
Abstract
The effect of alloying a small amount of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in MBE-grown ZnO <sub>x</sub>Se<sub>1-x</sub> epitaxial films (0 ≤ x ≤, 0.0135) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by the O incorporation. Both effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction band edge. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.