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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Iii, J. W. Ager
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2012P-type InGaN across entire composition range
- 2011Mg doped InN and confirmation of free holes in InNcitations
- 2009Electrical and electrothermal transport in InNcitations
- 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 2citations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Group III-nitride alloys as photovoltaic materialscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Characterization and manipulation of exposed Ge nanocrystals
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Narrow bandgap group III-nitride alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Effect of nitrogen on the band structure of III-N-V alloys
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article
Oxygen induced band-gap reduction in ZnOxSe1-x alloys
Abstract
The effect of alloying a small amount of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in MBE-grown ZnO <sub>x</sub>Se<sub>1-x</sub> epitaxial films (0 ≤ x ≤, 0.0135) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by the O incorporation. Both effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction band edge. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.