| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lederer, Maximilian
Fraunhofer Institute for Photonic Microsystems
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Influences and diffusion effects of lithium contamination during the thermal oxidation process of siliconcitations
- 2023300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applicationscitations
- 2023A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealingcitations
- 2023300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applicationscitations
- 2022Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin filmscitations
- 2021Electric field-induced crystallization of ferroelectric hafnium zirconium oxidecitations
- 2021RF-Characterization of HZO Thin Film Varactorscitations
- 2021Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxidecitations
- 2020Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffractioncitations
Places of action
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article
A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealing
Abstract
Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and the thickness scaling are among the advantageous properties of hafnium oxide. Different requirements must be fulfilled for different applications of hafnium oxide. Herein, high-temperature annealing and operation conditions are analyzed in order to investigate nonvolatile memories for automotive applications. A strong imprint behavior (shift in coercive voltages) is observed after annealing hafnium–zirconium–oxide thin films at temperatures varied between 100 and 200 °C. The imprint behavior is a significant challenge in many applications. Therefore, to reduce/recover the undesirable imprint behavior caused by high-temperature treatment, two different ways are successfully examined and delineated here: endurance cycling and applying high electric fields.