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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wenckstern, Holger Von
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Publications (4/4 displayed)
- 2023Realization of Conductive n‐Type Doped <i>α</i>‐Ga<sub>2</sub>O<sub>3</sub> on <i>m</i>‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Processcitations
- 2023Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin filmscitations
- 2022Band Alignment of Al<sub>2</sub>O<sub>3</sub> on α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>citations
- 2019Native Point Defect Measurement and Manipulation in ZnO Nanostructurescitations
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article
Realization of Conductive n‐Type Doped <i>α</i>‐Ga<sub>2</sub>O<sub>3</sub> on <i>m</i>‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process
Abstract
<jats:sec><jats:label /><jats:p>Structural and electrical properties of undoped and doped <jats:italic>α</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films grown by pulsed laser deposition on <jats:italic>m</jats:italic>‐plane sapphire in a two‐step process are presented. A buffer layer of undoped <jats:italic>α</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is introduced below the electrically active thin film to improve the crystal quality and enable the stabilization of the <jats:italic>α</jats:italic>‐phase at lower substrate temperatures for sufficient dopant incorporation. Donor doping of the active layers with tin, germanium, and silicon, respectively, is realized below a critical substrate temperature of 600 °C. Depth‐resolved X‐ray photoelectron spectroscopy measurements on tin‐doped samples reveal a lower amount of tin in the bulk thin film compared to the surface and a lower tin incorporation for higher substrate temperatures, indicating desorption or float‐up processes that determine the dopant incorporation. Electron mobilities as high as 17 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> (at ) and 37 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> (at ) are achieved for tin‐ and germanium doping, respectively. Further, a narrow window of suitable annealing temperature from 680 to 700 K for obtaining ohmic Ti/Al/Au layer stacks is identified. For higher annealing temperatures, a deterioration of the electrical properties of the thin films is observed suggesting the need for developing low temperature contacting procedures for <jats:italic>α</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>‐based devices.</jats:p></jats:sec>