• Bove, Philippe
• Gautam, Lakshay
• Lee, Junhee
• Razeghi, Manijeh
• Rogers, David J.
• Teherani, Ferechteh H.
• Sandana, Eric V.

Abstract

<jats:sec><jats:label /><jats:p>Heteroepitaxial <jats:italic>κ</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films grown by metal–organic chemical vapor deposition (MOCVD) are found to have superior materials and electrical properties thanks to the interfacing with a <jats:italic>β</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> template layer. <jats:italic>κ</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a <jats:italic>β</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> template on a c‐sapphire substrate, higher quality <jats:italic>κ</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films are obtained, as evidenced by a smoother surface morphology, narrower X‐ray diffraction (XRD) peaks, and superior electrical performance. The implications of this phenomenon, caused by <jats:italic>β</jats:italic>‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>.</jats:p></jats:sec>

Topics

• surface
• x-ray diffraction
• thin film
• size-exclusion chromatography
• chemical vapor deposition