| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vähänissi, Ville
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (43/43 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Status report on emerging photovoltaicscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2021Efficient photon capture on germanium surfaces using industrially feasible nanostructure formationcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2020Modeling Field-effect in Black Silicon and its Impact on Device Performancecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Siliconcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2018Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cellscitations
- 2018Rapid thermal anneal activates light induced degradation due to copper redistributioncitations
- 2017Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Getteringcitations
- 2017Toward Effective Gettering in Boron-Implanted Silicon Solar Cellscitations
- 2017Full recovery of red zone in p-type high-performance multicrystalline siliconcitations
- 2017Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stackscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2014Iron Precipitation upon Gettering in Phosphorus-Implanted Czochralski Silicon and its Impact on Solar Cell Performancecitations
- 2013Passivation of black silicon boron emitters with atomic layer deposited aluminum oxidecitations
- 2008Metallization of Polymer Substrates for Flexible Electronics
Places of action
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article
Al-neal Degrades Al2O3 Passivation of Silicon Surface
Abstract
Publisher Copyright: © 2021 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH ; Atomic layer deposited (ALD) aluminum oxide (Al2O3) has emerged as a useful material for silicon devices due to its capability for effective surface passivation and ability to generate p+ region underneath the oxide as active or passive component in semiconductor devices. However, it is uncertain how Al2O3 films tolerate the so-called Al-neal treatment that is a necessary process step in devices that also contain silicon dioxide (SiO2) passivation layers. Herein, it is reported that the Al-neal process is harmful for the passivation performance of Al2O3 causing over eightfold increase in surface recombination velocity (SRV) (from 0.9 to 7.3 cm s−1). Interestingly, it is also observed that the stage at which the so-called activation of Al2O3 passivation is performed impacts the final degradation strength. The best result is obtained when the activation step is done at the end of the process together with the Al-neal thermal treatment, which results in SRV of 1.7 cm s−1. The results correlate well with the measured interface defect density, indicating that the Al-neal affects defects at the Si/SiOx/Al2O3 interface. The root causes for the defect reactions are discussed and possible reasons for the observed phenomena are suggested. ; Peer reviewed