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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Klein, Andreas
Technical University of Darmstadt
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024A Single Model for the Thermodynamics and Kinetics of Metal Exsolution from Perovskite Oxidescitations
- 2024High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics
- 2022Electronic and chemical properties of nickel oxide thin films and the intrinsic defects compensation mechanismcitations
- 2022Electroless Nanoplating of Pd−Pt Alloy Nanotube Networks: Catalysts with Full Compositional Control for the Methanol Oxidation Reaction
- 2021Chemical interaction of Na with cleaved (011) surfaces of CuInSe₂
- 2021Modification of energy band alignment and electric properties of Pt/Ba₀.₆Sr₀.₄TiO₃/Pt thin-film ferroelectric varactors by Ag impurities at interfaces
- 2021Energy level alignment and electrical properties of (Ba,Sr)TiO₃/Al₂O₃ interfaces for tunable capacitors
- 2021Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface
- 202112% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation
- 2021Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels
- 2021Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers
- 2021Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces
- 2021Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe₂ and WSe₂
- 2021Highly conductive grain boundaries in copper oxide thin films
- 2021Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)
- 2021Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfacescitations
- 2020Fermi level engineering for large permittivity in BaTiO3-based multilayerscitations
- 2019Nickel oxide selectively deposited on the {101} facet of anatase TiO2 nanocrystal bipyramids for enhanced photocatalysiscitations
- 2018Supercritical CO2-assisted deposition of NiO on (101)-anatase-TiO2 for efficient facet engineered photocatalystscitations
- 2017High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigationcitations
- 2016Highly conductive grain boundaries in copper oxide thin filmscitations
- 2016Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interfacecitations
- 2013Transparent Conducting Oxides: Electronic Structure-Property Relationship from Photoelectron Spectroscopy with in situ Sample Preparationcitations
- 2010Surface energy controlled preferential orientation of thin filmscitations
- 2009Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applicationscitations
Places of action
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article
Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfaces
Abstract
<p>The Schottky barrier formation between polycrystalline acceptor-doped BaTiO<sub>3</sub> and high work function RuO<sub>2</sub> is studied using photoelectron spectroscopy. Schottky barrier heights for electrons of ≈1.4 eV are determined, independent of doping level and oxygen vacancy concentration of the substrates. The insensitivity of the barrier height is related to the high permittivity of BaTiO<sub>3</sub>, which results in space-charge regions (SCRs) being considerably wider than the inelastic mean free path of the photoelectrons. SCRs at any kind of interface should, therefore, be more important for the electronic and ionic conductivities in BaTiO<sub>3</sub> than in materials with lower permittivity. A Ba-rich phase at the surface of reduced acceptor-doped BaTiO<sub>3</sub> is also identified, which is explained by the formation of Ti vacancies in the 2D electron gas region at the surface.</p>