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Ding, Hui
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Publications (6/6 displayed)
- 2025Hierarchy of defects in near-Σ5 tilt grain boundaries in copper studied by length-scale bridging electron microscopy
- 2022Evidence for antipolar displacements in NaNbO3 thin filmscitations
- 2021Domain morphology of newly designed lead-free antiferroelectric NaNbO3-SrSnO3 ceramicscitations
- 2021Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfacescitations
- 2020Electric-field-induced antiferroelectric to ferroelectric phase transition in polycrystalline NaNbO3citations
- 2020Direct 3D Printing of Graphene Using Capillary Suspensionscitations
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article
Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfaces
Abstract
<p>The Schottky barrier formation between polycrystalline acceptor-doped BaTiO<sub>3</sub> and high work function RuO<sub>2</sub> is studied using photoelectron spectroscopy. Schottky barrier heights for electrons of ≈1.4 eV are determined, independent of doping level and oxygen vacancy concentration of the substrates. The insensitivity of the barrier height is related to the high permittivity of BaTiO<sub>3</sub>, which results in space-charge regions (SCRs) being considerably wider than the inelastic mean free path of the photoelectrons. SCRs at any kind of interface should, therefore, be more important for the electronic and ionic conductivities in BaTiO<sub>3</sub> than in materials with lower permittivity. A Ba-rich phase at the surface of reduced acceptor-doped BaTiO<sub>3</sub> is also identified, which is explained by the formation of Ti vacancies in the 2D electron gas region at the surface.</p>