| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Brammertz, Guy
General Electric (Finland)
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2024Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenizationcitations
- 2024Interfacial Metal Chlorides as a Tool to Enhance Charge Carrier Dynamics, Electroluminescence, and Overall Efficiency of Organic Optoelectronic Devices
- 2024Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2by Tungsten Selenization.citations
- 2024Design and synthesis of novel p-type TCOs: From computational screening towards film deposition
- 2023Ge-alloyed kesterite thin-film solar cells: previous investigations and current status – a comprehensive reviewcitations
- 2023Ultrasonic spray coating of kesterite CZTS films from molecular inkscitations
- 2023Organic- inorganic nanoparticle composite as an electron injection/hole blocking layer in organic light emitting diodes for large area lighting applicationscitations
- 2023Controlled li alloying by postsynthesis electrochemical treatment of Cu 2 ZnSn(S, Se) 4 absorbers for solar cellscitations
- 2022Relevance of Ge incorporation to control the physical behaviour of point defects in kesteritecitations
- 2021Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack designcitations
- 2021Comparative Study of Al2O3 and HfO2 for Surface Passivation of Cu(In,Ga)Se-2 Thin Films: An Innovative Al2O3/HfO2 Multistack Designcitations
- 2021A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se-2 solar cellscitations
- 2021Revealing the electronic structure, heterojunction band offset and alignment of Cu2ZnGeSe4: a combined experimental and computational study towards photovoltaic applicationscitations
- 2020Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layerscitations
- 2020Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stackscitations
- 2020Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layerscitations
- 2020How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devicescitations
- 2020Selective Area Growth of InP and Defect Elimination on Si (001) Substratescitations
- 2020Selective area growth of high quality InP on Si (001) substratescitations
- 2020Preparation of micro flake ink for low cost printing of CIS-Se absorber layers
- 2020GaSb molecular beam epitaxial growth onp-InP(001) and passivation within situdeposited Al2O3gate oxidecitations
- 2020Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit
- 2020Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substratescitations
- 2020Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substratescitations
- 2019A Study of the Degradation Mechanisms of Ultra Thin CIGS Solar Cells Submitted to a Damp Heat Environment
- 2019Crystallization properties of Cu2ZnGeSe4citations
- 2017Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cellscitations
- 2016Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cellscitations
- 2016Effect of Cu content and temperature on the properties of Cu2ZnSnSe4 solar cells
- 2015Effect of selenium content of CuInSex alloy nanopowder precursors on recrystallization of printed CuInSe2 absorber layers during selenization heat treatmentcitations
- 2015Selenization of printed Cu-In-Se alloy nanopowder layers for fabrication of CuInSe2 thin film solar cellscitations
- 2015Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cellscitations
- 2015Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigationscitations
- 2014Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cellscitations
- 2014Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cellscitations
- 2013Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layerscitations
- 2011Experimental and Modeling on Atomic Layer Deposition Al<sub>2</sub>O<sub>3</sub>/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface Treatmentscitations
- 2011GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxidecitations
- 2011Selective area growth of InP and defect elimination on Si (001) substratescitations
- 2010Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substratescitations
- 2009Thermal and plasma enhanced atomic layer deposition of Al2O3 on GaAs substrates
Places of action
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article
Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack design
Abstract
In Cu(In,Ga)Se2 (CIGS) thin-film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Therefore, in this study, Metal-Insulator- Semiconductor samples are used to investigate and compare the passivation effects of Al2O3 and HfO2 at the interface with CIGS. Capacitance-Voltage-Frequency measurements allow to qualitatively and quantitatively assess the existence of high negative charge density (Qf ~ -1012 cm- 2) and low interface-trap density (Dit ~1011 cm-2 eV-1). At the rear interface of CIGS solar cells, these respectively induce field-effect and chemical passivation. A trade-off is highlighted between stronger field-effect for HfO2 and lower interface-trap density for Al2O3. This motivates the usage of Al2O3 to induce chemical passivation at the front interface of CIGS solar cells but raises the issue of its processing compatibility with the buffer layer. Therefore, an innovative Al2O3/HfO2 multistack design is proposed and investigated for the first time. Effective chemical passivation is similarly demonstrated for this novel design, suggesting potential decrease in recombination rate at the front interface in CIGS solar cells and increased efficiency. 300°C annealing in N2 environment enable to enhance passivation effectiveness by reducing Dit while surface cleaning may reveal useful for alternative CIGS processing methods.