| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Szabó, Nadine
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and Vth Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTs
Abstract
<p>Trap states at the dielectric/GaN interface of AlGaN/GaN-based metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) can cause threshold voltage (V<sub>th</sub>) instability especially under positive gate bias stress. Herein, the influence of O<sub>2</sub> plasma surface preconditioning (SPC) before the atomic layer deposition of the Al<sub>2</sub>O<sub>3</sub> gate dielectric and of N<sub>2</sub> postmetallization anneal (PMA) after gate metallization on the Al<sub>2</sub>O<sub>3</sub>/GaN interface quality is investigated. The interface is characterized by multifrequency capacitance–voltage measurements which show a smaller frequency dispersion after the employment of SPC and PMA treatments with a reduction of the interface trap density D<sub>it</sub> to a value in the order of 2 × 10<sup>12</sup> cm<sup>−2</sup> eV<sup>−1</sup> near the conduction band edge. The effectiveness of SPC and PMA is demonstrated in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs by pulsed current–voltage measurements which reveal improved V<sub>th</sub> stability.</p>