| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Pozina, Galia
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2020Emission Properties of GaN Planar Hexagonal Microcavitiescitations
- 2019Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activitiescitations
- 2018Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxycitations
- 2017Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorodscitations
- 2017Polarization of stacking fault related luminescence in GaN nanorodscitations
- 2015Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorodscitations
- 2015Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorodscitations
- 2014Decoration of ZnO nanorods with coral reefs like NiO nanostructures by the hydrothermal growth method and their luminescence studycitations
- 2014Properties of the main Mg-related acceptors in GaN from optical and structural studiescitations
- 2013Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowthcitations
- 2013Luminescence of Acceptors in Mg-Doped GaNcitations
- 2013Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaNcitations
- 2012Optical and structural studies of homoepitaxially grown m-plane GaNcitations
- 2011Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaNcitations
- 2010Indirect optical transition due to surface band bending in ZnO nanotubescitations
- 2008Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substratecitations
Places of action
| Organizations | Location | People |
|---|
article
Emission Properties of GaN Planar Hexagonal Microcavities
Abstract
<jats:sec><jats:label /><jats:p>Fabrication of microcavities based on III‐nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of periods, at the same time keeping a good precision in terms of thickness and composition of the alloy. A planar design for GaN microresonators supporting whispering gallery modes is suggested. GaN hexagonal microstructures are fabricated by selective‐area metalorganic vapor phase epitaxy using focused ion beam for mask patterning. Low‐temperature cathodoluminescence spectra measured with a high spatial resolution demonstrate two dominant emission lines in the near bandgap region. These lines merge at room temperature into a broad emission band peaking at ≈3.3 eV, which is shifted toward lower energies compared with the reference excitonic spectrum measured for the GaN layer. A numerical analysis of exciton–polariton modes shows that some strongly localized cavity modes can have high Purcell coefficients and can strongly interact with the GaN exciton.</jats:p></jats:sec>