| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Seibt, Michael
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Relationship between structure and charge/orbital order in epitaxial single layer Ruddlesden–Popper manganite thin filmscitations
- 2024Scaling Behavior in the Spectral and Power Density Dependent Photovoltaic Response of Hot Polaronic Heterojunctions
- 2023Composition and electronic structure of $${rm SiO}_{rm x}$$/$${rm TiO}_{rm y}$$/Al passivating carrier selective contacts on n-type silicon solar cellscitations
- 2023Composition and electronic structure of SiOx/TiOy/Al passivating carrier selective contacts on n-type silicon solar cells
- 2023Composition and electronic structure of ${rm SiO}_{rm x}$/${rm TiO}_{rm y}$/Al passivating carrier selective contacts on n-type silicon solar cellscitations
- 2023Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-Based Magnetic Tunnel Junctionscitations
- 2021Tracing the Boron Diffusion into a Textured Silicon Solar Cell by Combining Boron Diffusion Simulation with Experimental and Simulated Scanning Transmission Electron Beam Induced Current
- 2021Phase Transitions in a Perovskite Thin Film Studied by Environmental In Situ Heating Nano‐Beam Electron Diffractioncitations
- 2020Room-Temperature Hot-Polaron Photovoltaics in the Charge-Ordered State of a Layered Perovskite Oxide Heterojunctioncitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Preparation Techniques for Cross‐Section Transmission Electron Microscopy Lamellas Suitable for Investigating In Situ Silicon–Aluminum Alloying at Grain Boundaries in Multicrystalline Siliconcitations
- 2016Ferroelectric origin in one-dimensional undoped ZnO towards high electromechanical responsecitations
- 2015Current-voltage characteristics of manganite-titanite perovskite junctionscitations
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article
Preparation Techniques for Cross‐Section Transmission Electron Microscopy Lamellas Suitable for Investigating In Situ Silicon–Aluminum Alloying at Grain Boundaries in Multicrystalline Silicon
Abstract
<jats:sec><jats:label /><jats:p>Herein, advanced preparation methods of cross‐section samples suitable for site‐specific studies of alloying processes are reported. To follow alloying processes in real time with the highest possible spatial resolution, in situ heating transmission electron microscopy (TEM) is conducted. As an industrially relevant model system, aluminum (Al) on multicrystalline silicon (mc‐Si) is chosen. Despite the tremendous advantages of in situ TEM compared with ex situ techniques, the development of suitable sample preparation recipes is a challenging task. As the standard focused ion beam (FIB) lift‐out fails for this preparation, three alternative methods are implemented. They show significant improvements compared with the widely used standard lift‐out and are described and evaluated in terms of contamination and overall lamella quality. Moreover, further improvements are discussed, leading to the conclusion that the new methods allow the reproducible preparation of lamellas suitable for site‐specific, in situ TEM alloying experiments.</jats:p></jats:sec>