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| Naji, M. |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Merdes, Saoussen
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Topics
Publications (9/9 displayed)
- 2022Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications
- 2021Red Y2O3 : Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applicationscitations
- 2020Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applicationscitations
- 2020Al 2 O 3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applicationscitations
- 2019Structural and spectroscopic properties of Eu-doped Y2O2S thin films prepared by atomic layer deposition
- 2015Kinetics of phase separation and coarsening in Cu-In-Ga precursor thin films for sequentially processed Cu(In,Ga)Se2 solar cells
- 2006Structural and optical characterization of CuInSe2 thin films prepared by spin coating technique
- 2005Growth and characterization of CuInSe2 thin films by spin coating and selenization technique using metal Naphthenates
- 2005Preparation of CuInS2 thin films by thermal decomposition of metal-Octoate and subsequent sulfurization using DTBS
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article
Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications
Abstract
<p>In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N-2 plasma treatment process at 90 degrees C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (approximate to 3.8 at% for hydrogen, approximate to 0.17 at% for carbon, and approximate to 0.51 at% for nitrogen), a high mass density (approximate to 3.1 g cm(-3)), and a low tensile residual stress (approximate to 160 MPa). A water vapor transmission rate of 2.9 x 10(-3) g m(-2) day(-1) is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.</p>