693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Heikkilä, Mikko J.
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (48/48 displayed)
- 2024Atomic Layer Deposition of ScF3 and ScxAl yFz Thin Filmscitations
- 2024Atomic Layer Deposition of Molybdenum Carbide Thin Filmscitations
- 2022Red Y2O3:Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applications
- 2021Atomic layer deposition of TbF3 thin filmscitations
- 2021Sulphide-induced stress corrosion cracking and hydrogen absorption of copper in deoxygenated water at 90 degrees Ccitations
- 2021Red Y2O3 : Eu-Based Electroluminescent Device Prepared by Atomic Layer Deposition for Transparent Display Applicationscitations
- 2020Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applicationscitations
- 2020Al 2 O 3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applicationscitations
- 2020Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursorscitations
- 2020Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer depositioncitations
- 2020Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditionscitations
- 2020Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Filmscitations
- 2019As2S3 thin films deposited by atomic layer depositioncitations
- 2019Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursorscitations
- 2019Nickel Germanide Thin Films by Atomic Layer Depositioncitations
- 2019Solid-State Conversion of Scandium Phosphate into Scandium Oxide with Sodium Compoundscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Gecitations
- 2019Intercalation of Lithium Ions from Gaseous Precursors into beta-MnO2 Thin Films Deposited by Atomic Layer Depositioncitations
- 2019Intercalation of Lithium Ions from Gaseous Precursors into β-MnO 2 Thin Films Deposited by Atomic Layer Depositioncitations
- 2019Toward epitaxial ternary oxide multilayer device stacks by atomic layer depositioncitations
- 2018Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealingcitations
- 2018Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealingcitations
- 2018Development of short-range order and intergranular carbide precipitation in Alloy 690 TT upon thermal ageingcitations
- 2018Early stage oxidation behavior of Al- and Si-alloyed stainless steels as well as Ni-based alloys in air at elevated temperaturescitations
- 2018Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Filmscitations
- 2018Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Filmscitations
- 2017As2S3 thin films deposited by atomic layer depositioncitations
- 2017Atomic Layer Deposition of Zinc Glutarate Thin Filmscitations
- 2017Advanced low-temperature ceramic nanocomposite fuel cells using ultra high ionic conductivity electrolytes synthesized through freeze-dried method and solid-routecitations
- 2017Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Gecitations
- 2017Thermal ageing and short-range ordering of Alloy 690 between 350 and 550 degrees Ccitations
- 2017Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Filmscitations
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016The structure and the photocatalytic activity of titania based nanotube and nanofiber coatingscitations
- 2016Highly conformal TiN by atomic layer deposition:growth and characterization
- 2016Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layerscitations
- 2015Effect of Electrochemical Potential on Stress Corrosion Cracking Susceptibility of EN 1.4301 (AISI 304) Austenitic Stainless Steels in Simulated Hot Black Liquorcitations
- 2015Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin filmscitations
- 2015Mechanical properties of aluminum, zirconium, hafnium and tantalum oxides and their nanolaminates grown by atomic layer depositioncitations
- 2015Studies on atomic layer deposition of IRMOF-8 thin filmscitations
- 2013Atomic Layer Deposition and Characterization of Vanadium Oxide Thin Filmscitations
- 2013Studies on atomic layer deposition of MOF-5 thin filmscitations
- 2013Effect of alloy composition and temperature on corrosion behavior of stainless steels in hot alkaline solutions
- 2012Lithium Phosphate Thin Films Grown by Atomic Layer Depositioncitations
- 2012Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Filmscitations
- 2010Atomic layer deposition and characterization of zirconium oxide-erbium oxide nanolaminatescitations
- 2009Atomic layer deposition of high-k oxides of the group 4 metals for memory applicationscitations
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article
Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursors
Abstract
This article describes the atomic layer deposition (ALD) of nickel nitride and nickel thin films using a diamine adduct of Ni(II) chloride, NiCl2(TMPDA) (TMPDA=N,N,N',N',-tetramethy1-1,3-propanediamine), as the metal precursor. Owing to the high reducing power of tert-butylhydrazine (TBH), the films are grown at low temperatures of 190-250 degrees C. This is one of the few low temperature ALD processes that can be used to grow Ni3N and Ni metal on both insulating and conductive substrates. The films are characterized in terms of crystallinity, morphology, composition, resistivity, and coercivity. Xray diffraction shows reflections compatible with either hexagonal Ni or Ni3N. Composition analyses suggest that the films are close to stoichiometric Ni3N. Despite the nitride component, the films exhibit low resistivity values and at the lowest, a resistivity of 37 RD cm is achieved. The result is lower than what is typically observed for NixN films and not much higher than the best results concerning ALD Ni metal. The nitrogen content of the films is lowered down to 1.2 at% by postdeposition reduction at 150 degrees C in 10% forming gas. After the reduction, the nonmagnetic nitride films are converted to ferromagnetic Ni metal.