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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dubois, Sébastien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations
- 2023Passivating Silicon Tunnel Diode for Perovskite on Silicon nip Tandem Solar Cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2019Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2019Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cellscitations
- 2019Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processingcitations
- 2019Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cellscitations
- 2019SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation studycitations
- 2018Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2018Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxidecitations
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article
Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cells
Abstract
<jats:sec><jats:label /><jats:p>Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO<jats:sub>x</jats:sub>) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focuses on the development of boron‐doped poly‐Si/SiO<jats:sub>x</jats:sub> structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo‐voltage potential. The poly‐Si layer is obtained by depositing a hydrogen‐rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly‐Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister‐free poly‐Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo‐voltage value of 714 mV is obtained.</jats:p></jats:sec>