| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Król, Krystian Bogumił
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2020Surface sintering of tungsten powder targets designed by electromagnetic discharge: A novel approach for film synthesis in magnetron sputteringcitations
- 2018Relation between modulation frequency of electric power oscillation during pulse magnetron sputtering deposition of MoNx thin filmscitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2018Structure and electrical resistivity dependence of molybdenum thin films deposited by dc modulated pulsed magnetron sputteringcitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
Places of action
| Organizations | Location | People |
|---|
article
Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures
Abstract
In this paper a ZrO2/SiO2/4H‐SiC dielectric system for potential application as gate dielectric for SiC MOSFETs is investigated. An enhanced breakdown performance for this type of dielectric stacks having typical value of critical field of 17 MV cm−1 and reaching a maximum value of 20 MV cm−1 is presented. The observed results are explained based on high‐k layer properties in conjunction with a reduced impact ionization effect in SiO2 layer. Electrical and structural properties of this dielectric stack are measured and analyzed. Growth temperature of atomic layer deposition process seems to be a crucial parameter that influences on layer microstructure and electrical properties such as permittivity of high‐κ layer and critical electric field for all dielectric stacks.