| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kwietniewski, Norbert
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2022Performance of nanoimprinted and nanocoated optical label-free biosensor - nanocoating properties perspectivecitations
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2017Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stackscitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Filmscitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2010Measurements of Planar Metal -Dielectric Structures Using Split-Post Dielectric Resonatorscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2008Application of ZnO to passivate the GaN-based device structures
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
Places of action
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article
Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures
Abstract
In this paper a ZrO2/SiO2/4H‐SiC dielectric system for potential application as gate dielectric for SiC MOSFETs is investigated. An enhanced breakdown performance for this type of dielectric stacks having typical value of critical field of 17 MV cm−1 and reaching a maximum value of 20 MV cm−1 is presented. The observed results are explained based on high‐k layer properties in conjunction with a reduced impact ionization effect in SiO2 layer. Electrical and structural properties of this dielectric stack are measured and analyzed. Growth temperature of atomic layer deposition process seems to be a crucial parameter that influences on layer microstructure and electrical properties such as permittivity of high‐κ layer and critical electric field for all dielectric stacks.