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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Szmidt, Jan
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2018Capillary Sensors with UV-Forced Degradation and Fluorescence Reading of Chemical Stability and Polycyclic Aromatic Hydrocarbons Presence in Diesel Fuels
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
- 2006Optical fiber switch for sensor networks: design principles
- 2001Electronic properties of unipolar heterostructures amorphous carbon diamond - amorphous carbon
Places of action
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article
Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures
Abstract
In this paper a ZrO2/SiO2/4H‐SiC dielectric system for potential application as gate dielectric for SiC MOSFETs is investigated. An enhanced breakdown performance for this type of dielectric stacks having typical value of critical field of 17 MV cm−1 and reaching a maximum value of 20 MV cm−1 is presented. The observed results are explained based on high‐k layer properties in conjunction with a reduced impact ionization effect in SiO2 layer. Electrical and structural properties of this dielectric stack are measured and analyzed. Growth temperature of atomic layer deposition process seems to be a crucial parameter that influences on layer microstructure and electrical properties such as permittivity of high‐κ layer and critical electric field for all dielectric stacks.