693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Savin, Hele
Helsinki Institute of Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (75/75 displayed)
- 2024Wetting Properties of Black Silicon Layers Fabricated by Different Techniquescitations
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Detection of Microcracks in Cz-Si Wafer Manufacturing by Photoluminescence Imaging
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditionscitations
- 2023Understanding the multilevel phenomena that enables inorganic atomic layer deposition to provide barrier coatings for highly-porous 3-D printed plastic in vacuums
- 2023Understanding the multilevel phenomena that enables inorganic atomic layer deposition to provide barrier coatings for highly-porous 3-D printed plastic in vacuums
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Status report on emerging photovoltaicscitations
- 2023Status report on emerging photovoltaicscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2022Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Efficient photon capture on germanium surfaces using industrially feasible nanostructure formationcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2020Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applicationscitations
- 2020Al 2 O 3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applicationscitations
- 2020Modeling Field-effect in Black Silicon and its Impact on Device Performancecitations
- 2020Passivation of Detector-Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxidecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2020Vacuum Outgassing Characteristics of Unpigmented 3-D Printed Polymers Coated with ALD Aluminacitations
- 2020Vacuum Outgassing Characteristics of Unpigmented 3-D Printed Polymers Coated with ALD Aluminacitations
- 2019Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Siliconcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2018Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturingcitations
- 2018Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturingcitations
- 2018Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cellscitations
- 2018Moving Beyond p-Type mc-Sicitations
- 2018Solubility and Diffusivitycitations
- 2018Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Siliconcitations
- 2018Nanometer-scale depth-resolved atomic layer deposited SiO2 thin films analysed by glow discharge optical emission spectroscopycitations
- 2018Nanometer-scale depth-resolved atomic layer deposited SiO2 thin films analysed by glow discharge optical emission spectroscopycitations
- 2018Rapid thermal anneal activates light induced degradation due to copper redistributioncitations
- 2018Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellscitations
- 2018Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellscitations
- 2017Predictable quantum efficient detector based on n-type silicon photodiodescitations
- 2017Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Getteringcitations
- 2017Surface Passivation Properties of HfO2 Thin Film on n-Type Crystalline Sicitations
- 2017Toward Effective Gettering in Boron-Implanted Silicon Solar Cellscitations
- 2017Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experimentscitations
- 2017Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivationcitations
- 2017Full recovery of red zone in p-type high-performance multicrystalline siliconcitations
- 2017Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stackscitations
- 2017Modeling of light-induced degradation due to Cu precipitation in p-type silicon. Pt.II: Comparison of simulations and experimentscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2016Investigation of Al2O3 Passivation Layers by Photoluminescence Imaging under Applied Voltage
- 2014Iron Precipitation upon Gettering in Phosphorus-Implanted Czochralski Silicon and its Impact on Solar Cell Performancecitations
- 2013Analyses of the evolution of iron-silicide precipitates in multicrystalline silicon during solar cell processingcitations
- 2013Passivation of black silicon boron emitters with atomic layer deposited aluminum oxidecitations
- 2012Modeling the size distribution of iron silicide precipitates in multicrystalline siliconcitations
- 2004Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency
Places of action
| Organizations | Location | People |
|---|
article
Nanometer-scale depth-resolved atomic layer deposited SiO2 thin films analysed by glow discharge optical emission spectroscopy
Abstract
<p>In this contribution, pulsed radio frequency (rf) glow discharge optical emission spectroscopy (GDOES) is used to investigate the film properties of SiO<sub>2</sub> deposited by plasma enhanced atomic layer deposition (PEALD), for example, the chemical composition, structural properties and film thickness. The total sputtering time until the interface between the SiO<sub>2</sub> layer and the Si substrate is ≈13 s. The main impurities in the film, that is, H, C, and N, are detected. It is observed that both C and N intensities decrease with increasing plasma power during deposition of the thin film. The higher plasma power seems to increase the reactivity of the PEALD process and consequently, it might reduce the concentration of impurities in the deposited film. Moreover, the deviation of the GDOES sputtering rates on the film are related to the film density. The thickness of one-hundred-nanometer range SiO<sub>2</sub> film is calculated from the GDOES silicon and oxygen emission profiles, and its difference from ellipsometry and X-ray reflectivity measurements highlights the challenges for the GDOES technique for transparent thin films.</p>