| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giannazzo, Filippo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023On the Possibility of Realizing a 2D Structure of Si-N Bonds by Metal-Organic Chemical Vapor Deposition
- 20232D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interfacecitations
- 20232D graphitic-like gallium nitride and other structural selectivity in confinement at graphene/SiC interfacecitations
- 2021MOCVD of AlN on epitaxial graphene at extreme temperaturescitations
- 2021Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Depositioncitations
- 2021Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth : Mini-Reviewcitations
- 2021Indium Nitride at the 2D Limitcitations
- 2020Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interfacecitations
- 2019Nano-structured TiO2 grown by low-temperature reactive sputtering for planar perovskite solar cellscitations
- 2018Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaNcitations
- 2017Ambipolar MoS2Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalizationcitations
- 2013Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiCcitations
- 2011Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
- 2010Nanoscale characterization of electrical transport at metal/3C-SiC interfacescitations
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article
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN
Abstract
<jats:sec><jats:label /><jats:p>Gallium nitride (GaN) is a promising candidate for high‐power and high‐frequency devices. To date, the lack of large area bulk GaN materials of reasonable cost and quality has limited the technology almost completely to lateral devices. However, vertical structures are attractive to obtain a higher current density and a reduced device size. In this work, the electrical behavior of a Ni/Au Schottky barrier on bulk GaN material is studied, using vertical Schottky diodes. The forward current–voltage characteristics of the diodes reveal a temperature dependence of both the ideality factor (<jats:italic>n</jats:italic>) and of the Schottky barrier height (<jats:italic>Φ</jats:italic><jats:sub>B</jats:sub>). The ideal value of the barrier of 1.72 eV extrapolated at <jats:italic>n</jats:italic> = 1 is in agreement with the results obtained by capacitance–voltage measurements. A nanoscale electrical analysis performed by conductive atomic force microscopy (C‐AFM) allow to visualize the barrier height inhomogeneity and to correlate the current distribution to the surface morphology of the material. The barrier inhomogeneity explains the temperature behavior of ideality factor and barrier height determined by the macroscopic diodes. Preliminary structural analyses carried out by transmission electron microscopy (TEM) of the metal semiconductor interface revealed a typically flat Au/Ni bilayer structure, the Ni layer being epitaxial to GaN, with some mosaicity.</jats:p></jats:sec>