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Masłyk, Monika
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article
Electrical characterization of ZnO/4H-SiC n–p heterojunction diode
Abstract
The structure and electrical properties of zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) as well as electrical properties of ZnO/4H-SiC n–p heterojunction diodes were investigated. Hall measurements of ZnO films show their n-type high intrinsic conductivity. Structural characterization of the ZnO layers performed using X-ray diffraction show their polycrystalline morphology. Aluminum (Al) ohmic contacts fabricated to n-ZnO demonstrate linear characteristics and low resistivities. The I–V measurements of ZnO/4H-SiC n–p heterojunction showed strong diode-like behavior with the low leakage current, turn-on voltage of around 1.7 V, ideality factor of 1.17, and high rectification ratio. Extracting the built-in potential (1.71 V) from the C–V measurements allowed to determine band offsets and thus the flat-band energy diagram of produced heterostructure.