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Werbowy, Aleksander
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Publications (5/5 displayed)
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
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article
Electrical characterization of ZnO/4H-SiC n–p heterojunction diode
Abstract
The structure and electrical properties of zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) as well as electrical properties of ZnO/4H-SiC n–p heterojunction diodes were investigated. Hall measurements of ZnO films show their n-type high intrinsic conductivity. Structural characterization of the ZnO layers performed using X-ray diffraction show their polycrystalline morphology. Aluminum (Al) ohmic contacts fabricated to n-ZnO demonstrate linear characteristics and low resistivities. The I–V measurements of ZnO/4H-SiC n–p heterojunction showed strong diode-like behavior with the low leakage current, turn-on voltage of around 1.7 V, ideality factor of 1.17, and high rectification ratio. Extracting the built-in potential (1.71 V) from the C–V measurements allowed to determine band offsets and thus the flat-band energy diagram of produced heterostructure.