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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Waser, Rainer
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Variability-aware modeling of electrochemical metallization memory cells
- 2024Space charge governs the kinetics of metal exsolutioncitations
- 2023Enhanced metal exsolution at the non-polar (001) surfaces of multi-faceted epitaxial thin filmscitations
- 2021Carbonate formation lowers the electrocatalytic activity of perovskite oxides for water electrolysiscitations
- 2020Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen bufferscitations
- 2020Defect chemistry of donor-doped BaTiO 3 with BaO-excess for reduction resistant PTCR thermistor applications – redox-behaviourcitations
- 2020Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrodecitations
- 2019Topotactic Phase Transition Driving Memristive Behaviorcitations
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2019Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfacescitations
- 2018A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3-Based Memory Cellcitations
- 2018Addressing Multiple Resistive States of Polyoxovanadatescitations
- 2018Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devicescitations
- 2017Electrochemical Tantalum Oxide for Resistive Switching Memoriescitations
- 2017Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devicescitations
- 2015Formation and Movement of Cationic Defects During Forming and Resistive Switching in $mathrm{SrTiO_3}$ Thin Film Devicescitations
- 2015Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin filmscitations
- 2015The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin filmscitations
- 2015Resistive Switching of Individual, Chemically Synthesized TiO $_{2}$ Nanoparticlescitations
- 2014Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO 3 by confocal Raman microscopycitations
- 2014Physical origins and suppression of Ag dissolution in $mathrm{GeS_x}$-based ECM cellscitations
- 2014Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applicationscitations
- 2013Growth and crystallization of TiO 2 thin films by atomic layer deposition using a novel amido guanidinate titanium source and tetrakis-dimethylamido-titanium
- 2013Dysprosium-doped (Ba, Sr) TiO3 thin films on nickel foilsfor capacitor applicationscitations
- 2013Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scatteringcitations
- 2012Electrochemical metallization cells—blending nanoionics into nanoelectronics?citations
- 2011Spark plasma sintering of nanocrystalline BaTiO3-powders: consolidation behavior and dielectric characteristicscitations
- 2005High-k dielectric materials by metalorganic chemical vapor deposition : Growth and characterization
- 2001Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decompositioncitations
Places of action
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article
Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films
Abstract
<p>The polarity of the resistive switching (RS) characteristic of metal-oxide-metal devices from atomic layer deposited polycrystalline ZrO2 films was studied by means of impedance spectroscopy. Pt/ZrO2/Ti/Pt cells made with 10nm Ti and 30nm Pt capping top electrodes, served as unipolar switching (US) devices. Bipolar switching (BS) devices were represented by Pt/ZrO2/30nm TiN cells. Temperature measurements of the ON-state resistances clearly show metallic and semiconducting behavior for the US and BS cells, respectively. The pristine and the ON and OFF states of the devices were analyzed by means of impedance spectroscopy. All ZrO2 based RS devices exhibited similar impedance characteristics in the pristine states. In contrast, after electroforming clear differences in the Nyquist-plots of the US and BS devices were observed. The effect of the device structure on the RS polarity is discussed under consideration of the pillar-shaped grainy microstructure of the ZrO2 thin films. An empirical model based on redox reactions between ZrO2 and the non-noble metal electrode is proposed emphasizing defect formation prior at the ZrO2 grain boundaries.</p>