| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Ritslaid, Peeter
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Filmscitations
- 2023Ag Sputter-Deposited on MnO2-Carbon Nanotube Nanocomposites as Electrocatalysts for Oxygen Reduction Reaction in Alkaline Mediacitations
- 2022Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Depositioncitations
- 2022Structure and electrical behavior of hafnium-praseodymium oxide thin films Grown by atomic layer depositioncitations
- 2021Optical and mechanical properties of nanolaminates of zirconium and hafnium oxides grown by atomic layer depositioncitations
- 2018Atomic layer deposition and properties of ZrO2/Fe2O3 thin filmscitations
- 2014Atomic layer deposition of Zr<scp>O</scp><sub>2</sub> for graphene‐based multilayer structures: <i>In situ</i> and <i>ex situ</i> characterization of growth processcitations
Places of action
| Organizations | Location | People |
|---|
article
Atomic layer deposition of Zr<scp>O</scp><sub>2</sub> for graphene‐based multilayer structures: <i>In situ</i> and <i>ex situ</i> characterization of growth process
Abstract
Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO2 thin films on graphene. The films were grown from ZrCl4 and H2O on graphene prepared by chemical vapor deposition method on 100‐nm thick nickel film or on Cu‐foil and transferred onto QCM sensor. The deposition was performed at a substrate temperature of 190 °C. The growth of the dielectric film on graphene was significantly retarded compared to the process carried out on QCM without graphene. After the deposition of dielectric films, the basic structure of graphene was retained. <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssa201330106-gra-0001.png" xlink:title="pssa201330106-gra-0001"