| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Varpula, Aapo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2018Rapid Thermal Characterization of Materials with Ultra-High Resolution of Droplet Size Specimens using the Three-Omega Methodcitations
- 2018Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
- 2018Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samplescitations
- 2018Thermal characterization of liquid and solid samples using a measurement platform for the bidirectional 3-omega method
- 2017Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranescitations
- 2015Nondestructive characterization of fusion and plasma activated wafer bonding using mesa and recess structurescitations
- 2011Electrical properties of granular semiconductors : modelling and experiments on metal-oxide gas sensorscitations
- 2011A compact quantum statistical model for the ballistic nanoscale MOSFETscitations
- 2010Magnetic polarons in ferromagnetic semiconductor single-electron transistorscitations
- 2010Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensorscitations
- 2010Modelling of dc characteristics for granular semiconductorscitations
- 2010Small-signal analysis of granular semiconductorscitations
- 2010Modeling of transient electrical characteristics for granular semiconductorscitations
Places of action
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article
A compact quantum statistical model for the ballistic nanoscale MOSFETs
Abstract
We develop an analytical quantum statistical model for nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). The model describes transport both in the scattering-limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green's function technique. The obtained quantum statistical current expression reduces to the semiclassical one in the absence of scattering. The model indicates that in nanoscale devices the scattering processes become dependent on the bias voltages. The calculated results for the I-V characteristics are in good agreement with the experimental results in the case of a 70 nm MOSFET. The model includes a minimal number of fitting parameters and it can be used in the design of ultra large-scale integrated circuits.