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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Odonnell, Kevin
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2019Room temperature cathodoluminescence quenching of Er3+ in AlNOErcitations
- 2015Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixingcitations
- 2012Photoluminescence of Eu-doped GaNcitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
- 2005Selectively excited photoluminescence from Eu- implanted GaNcitations
- 2004Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes
- 2002Structural and optical properties of InGaN/GaN layers close to the critical layer thicknesscitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Compositional pulling effects in InxGa1_xN/GaN layerscitations
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article
Rare earth doping of III-nitride alloys by ion implantation
Abstract
The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.