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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Watson, Ian
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2020Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate
- 2017Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodescitations
- 2017The impact of biomass feedstock composition and pre-treatments on tar formation during biomass gasification
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2012Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameterscitations
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Free-standing light-emitting organic nanocomposite membranes
- 2009White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structurescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfercitations
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Probing bulk and surface damage in widegap semiconductorscitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Rare earth doping of III-nitride alloys by ion implantation
Abstract
The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.