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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zdunek, Krzysztof
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2021Synthesis of Copper Nitride Layers by the Pulsed Magnetron Sputtering Method Carried out under Various Operating Conditionscitations
- 2020Design of pulsed neon injection in the synthesis of W-B-C films using magnetron sputtering from a surface-sintered single powder cathodecitations
- 2020Surface sintering of tungsten powder targets designed by electromagnetic discharge: A novel approach for film synthesis in magnetron sputteringcitations
- 2019Plasmochemical investigations of DLC/WCx nanocomposite coatings synthesized by gas injection magnetron sputtering techniquecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2018Relation between modulation frequency of electric power oscillation during pulse magnetron sputtering deposition of MoNx thin filmscitations
- 2018Phase composition of copper nitride coatings examined by the use of X-ray diffraction and Raman spectroscopycitations
- 2018Structure and electrical resistivity dependence of molybdenum thin films deposited by dc modulated pulsed magnetron sputteringcitations
- 2017Reactive sputtering of titanium compounds using the magnetron system with a grounded cathodecitations
- 2017Multi-sided metallization of textile fibres by using magnetron system with grounded cathodecitations
- 2016Determination of sp 3 fraction in ta-C coating using XPS and Raman spectroscopy
- 2016Titanium nitride coatings synthesized by IPD method with eliminated current oscillationscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2010Structure of Fe-Cu coatings prepared by the magnetron sputtering method
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
Places of action
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article
Electric Characterization and Selective Etching of Aluminum Oxide
Abstract
This work presents results of investigations of Al2O3 thin films, deposited on Si substrates by means of impulse plasma deposition (IPD). Round, aluminum (Al) electrodes were evaporated on the top of deposited layers. Thus, metal-insulator-semiconductor (MIS) structures were created with aluminum oxide thin films playing the role of the insulator. It enabled subsequent electrical of studied material. Al2O3 layers were selective etched in a buffer of hydrofluoric acid. The photoresist was used as a masking material. The influence of etching time on the photoresist mask, etching progress, and the state of exposed Si surface was subsequently studied and is discussed. Films' microstructure were additionally studied by scanning electron microscopy (SEM).