| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Phang, Sieu Pheng
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cellscitations
- 2022Gettering in silicon photovoltaicscitations
- 2021Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contactscitations
- 201922.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Waferscitations
- 2018Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cellscitations
- 2018Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cellscitations
- 2015Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline siliconcitations
- 2014External and internal gettering of interstitial iron in silicon for solar cellscitations
- 2014The impact of SiO2/SiNrm x stack thickness on laser doping of silicon solar cellcitations
- 2013Secondary electron microscopy dopant contrast image (SEMDCI) for laser dopingcitations
- 2012Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imagingcitations
Places of action
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article
Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cells
Abstract
<jats:title>Abstract</jats:title><jats:p>This study focuses on electron‐selective passivating contacts for crystalline silicon (c‐Si) solar cells where an interlayer is used to provide a low contact resistivity between the c‐Si substrate and the metal electrode. These electron contact interlayers are used in combination with other passivating interlayers (e.g., a‐Si:H, TiO<jats:sub>x</jats:sub>, and Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>) to improve surface passivation whilst still permitting contact resistivities suitable for high‐efficiency solar cells. We show that a wide variety of thermally evaporated materials, most of which have ionic character, enable an Ohmic contact between n‐type c‐Si and Al. From this pool of compounds, we observed that CsBr has especially promising behavior because of its excellent performance and thermal stability when combined with thin passivating layers. With different test structures, we were able to demonstrate low contact resistance using TiO<jats:sub>x</jats:sub>/CsBr, Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>/CsBr, and a‐Si:H/CsBr stacks on n‐type c‐Si. The quality of the provided surface passivation depended on the stack but we achieved the best overall passivation stability with TiO<jats:sub>x</jats:sub>/CsBr. Finally, we were able to demonstrate an efficiency >20% on a laboratory‐scale solar cell that implements the TiO<jats:sub>x</jats:sub>/CsBr/Al stack as full‐area rear‐side electron selective contact.</jats:p>