| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Macco, Bart
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Surface passivation approaches for silicon, germanium, and III–V semiconductorscitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowires:Implications for SiGe-Based Nanolaserscitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowirescitations
- 2023Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cellscitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cellscitations
- 2022Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cellscitations
- 2022Atomic layer deposition of conductive and semiconductive oxidescitations
- 2022Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxidecitations
- 2022POx/Al2O3 stacks for surface passivation of Si and InPcitations
- 2022POx/Al2O3 stacks for surface passivation of Si and InPcitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Excellent surface passivation of germanium by a-Si:H/Al2O3 stackscitations
- 2020Improved Passivation of n-Type Poly-Si Based Passivating Contacts by the Application of Hydrogen-Rich Transparent Conductive Oxidescitations
- 2020Improved passivation of n-Type Poly-Si based passivating Contacts by the Application of Hydrogen-Rich Transparent Conductive Oxidescitations
- 2018Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cellscitations
- 2018Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics
- 2017Towards the implementation of atomic layer deposited In2O3 : H in silicon heterojunction solar cellscitations
Places of action
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article
Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cells
Abstract
<jats:title>Abstract</jats:title><jats:p>This study focuses on electron‐selective passivating contacts for crystalline silicon (c‐Si) solar cells where an interlayer is used to provide a low contact resistivity between the c‐Si substrate and the metal electrode. These electron contact interlayers are used in combination with other passivating interlayers (e.g., a‐Si:H, TiO<jats:sub>x</jats:sub>, and Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>) to improve surface passivation whilst still permitting contact resistivities suitable for high‐efficiency solar cells. We show that a wide variety of thermally evaporated materials, most of which have ionic character, enable an Ohmic contact between n‐type c‐Si and Al. From this pool of compounds, we observed that CsBr has especially promising behavior because of its excellent performance and thermal stability when combined with thin passivating layers. With different test structures, we were able to demonstrate low contact resistance using TiO<jats:sub>x</jats:sub>/CsBr, Nb<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>/CsBr, and a‐Si:H/CsBr stacks on n‐type c‐Si. The quality of the provided surface passivation depended on the stack but we achieved the best overall passivation stability with TiO<jats:sub>x</jats:sub>/CsBr. Finally, we were able to demonstrate an efficiency >20% on a laboratory‐scale solar cell that implements the TiO<jats:sub>x</jats:sub>/CsBr/Al stack as full‐area rear‐side electron selective contact.</jats:p>