• Bonilla, Ruy S.
• Wilshaw, Peter R.
• Miller, Poppy
• Niu, Xinya
• Wright, Matthew
• Osullivan, John

Abstract

<jats:title>Abstract</jats:title><jats:p>Indium‐based transparent conducting electrodes (TCEs) are a major limiting factor in perovskite/silicon tandem cell scalability, while also limiting maximum cell efficiencies. In this work, we propose a novel TCE based on electrostatically doped graphene monolayers to circumvent these challenges. The electrode is enabled by a thin film dielectric that is charged and interfaced to a graphene film, optimally exploiting electrostatic doping. The field effect mechanism allows the modulation of charge carriers in monolayer graphene as a function of charge concentration in the dielectric thin film. Electrostatic charge was deposited on SiO<jats:sub>2</jats:sub> membranes, and graphene transferred onto them exhibited a reduction in sheet resistance because of the induced charge carriers. We show a reduction in sheet resistance of graphene by 60% in just 3 min of dielectric charging, without impacting the transmission of light through the film stack. Hall effect measurements indicated that the mobility of the films was not significantly degraded. The deposition of negative electrostatic charge reversed this effect, allowing for precise tunability of charge concentration from n‐ to p‐type. We develop a model to determine the required sheet resistance of a graphene TCE with 97% transmittance in a perovskite/silicon tandem cell. As the technique here reported does not impact transmittance, a graphene TCE with a sheet resistance below 50 Ω/□ could enable efficiencies up to 44%, presenting a promising alternative to indium‐based TCEs.</jats:p>

Topics

• Deposition
• perovskite
• impedance spectroscopy
• mobility
• thin film
• Silicon
• Indium