| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mazzarella, Luana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Opto-electrical modelling and roadmap for 2T monolithic Perovskite/CIGS tandem solar cellscitations
- 2023Crystallization Process for High-Quality Cs0.15FA0.85PbI2.85Br0.15Film Deposited via Simplified Sequential Vacuum Evaporationcitations
- 2022Slow Shallow Energy States as the Origin of Hysteresis in Perovskite Solar Cellscitations
- 2022Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interfacecitations
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2020Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contactscitations
- 2020Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contactscitations
- 2019High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:Hcitations
- 2019Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layercitations
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article
Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interface
Abstract
<p>Thin films of transition metal oxides such as molybdenum oxide (MoO<sub>x</sub>) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoO<sub>x</sub> layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoO<sub>x</sub> layer quality is the interface between the MoO<sub>x</sub> and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoO<sub>x</sub> by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoO<sub>x</sub> hole collector. With this approach, we can thin down the MoO<sub>x</sub> thickness to 1.7 nm and demonstrate short-circuit current density well above 40 mA/cm<sup>2</sup> and a champion device exhibiting 23.83% conversion efficiency.</p>