| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Dale, Phillip
University of Luxembourg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023A simple synthetic approach to BaZrS3, BaHfS3, and their solid solutionscitations
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2023A simple synthetic approach to BaZrS<sub>3</sub>, BaHfS<sub>3</sub>, and their solid solutionscitations
- 2020Continuous-wave laser annealing of metallic layers for CuInSe2 solar cell applications: effect of preheating treatment on grain growthcitations
- 2018Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Gecitations
- 2012Thin film solar cells based on the ternary compound Cu2SnS3citations
- 2010CuInSe2 precursor films electro-deposited directly onto MoSe2citations
- 2008New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4 as an alternative absorber materialcitations
Places of action
| Organizations | Location | People |
|---|
article
Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltages
Abstract
<jats:title>Abstract</jats:title><jats:p>Currently, Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open‐circuit voltage, which is the focus of the work presented here. Polycrystalline thin‐film Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature‐dependent current–voltage characteristics. It is found that a post‐deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> absorber. The increased activation energy is accompanied by an increased photoluminescence yield, that is, reduced non‐radiative recombination. Finished Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> solar cell devices reach open‐circuit voltages as high as 485 mV. Contrarily, the short‐circuit current density of these devices is limiting the efficiency after the post‐deposition annealing. It is shown that atomic layer‐deposited intermediate buffer layers such as TiO<jats:sub>2</jats:sub> or Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> can pave the way for overcoming this limitation.</jats:p>