| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Siebentritt, Susanne
University of Luxembourg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Composition dependence of electronic defects in CuGaS2citations
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2023Chalcopyrite solar cells —state-of-the-art and options for improvementcitations
- 2023On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se2citations
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2023CuIn(Se,Te)2 absorbers with bandgaps <1 eV for bottom cells in tandem applications
- 2022Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cellscitations
- 2022How much gallium do we need for a p-type Cu(In,Ga)Se<sub>2</sub>?citations
- 2021Passivating Surface Defects and Reducing Interface Recombination in CuInS<sub>2</sub> Solar Cells by a Facile Solution Treatmentcitations
- 2021The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cellscitations
- 2020Oxidation as Key Mechanism for Efficient Interface Passivation in Cu (In,Ga)Se2 Thin-Film Solar Cells
- 2020Ultra-thin passivation layers in Cu(In,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping
- 2016Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4 : Theoretical and experimental investigationscitations
- 2015Epitaxial Cu2ZnSnSe4 thin films and devicescitations
- 2014Single second laser annealed CuInSe2 semiconductors from electrodeposited precursors as absorber layers for solar cellscitations
- 2012Thin film solar cells based on the ternary compound Cu2SnS3citations
- 2008Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8citations
Places of action
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article
Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltages
Abstract
<jats:title>Abstract</jats:title><jats:p>Currently, Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open‐circuit voltage, which is the focus of the work presented here. Polycrystalline thin‐film Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature‐dependent current–voltage characteristics. It is found that a post‐deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> absorber. The increased activation energy is accompanied by an increased photoluminescence yield, that is, reduced non‐radiative recombination. Finished Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> solar cell devices reach open‐circuit voltages as high as 485 mV. Contrarily, the short‐circuit current density of these devices is limiting the efficiency after the post‐deposition annealing. It is shown that atomic layer‐deposited intermediate buffer layers such as TiO<jats:sub>2</jats:sub> or Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> can pave the way for overcoming this limitation.</jats:p>