| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Valle, Nathalie
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2021Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas <i>via</i> isotopic trackingcitations
- 2020Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Filmcitations
- 2019Friction and wear performance of functionally graded ductile iron for brake padscitations
- 2019Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries
- 2018A passivating contact for silicon solar cells formed during a single firing thermal annealingcitations
- 2017Understanding the mechanisms of Si–K–Ca glass alteration using silicon isotopescitations
- 201613.3% efficient solution deposited Cu(In,Ga)Se2 solar cells processed with different sodium salt sourcescitations
- 2016Metallurgical characterization of coupled carbon diffusion and precipitation in dissimilar steel weldscitations
- 2013Redistribution and Effect of Various Elements on the Morphology of Primary Graphite in Cast Ironcitations
- 2013Distribution of carbon in martensite during quenching and tempering of dual phase steels and consequences for damage propertiescitations
- 2012A SIMS and TEM investigation of the microstructure of wear-resistant ductile cast ironcitations
- 2012Effect of various dopant elements on primary graphite growthcitations
- 2010Elemental and isotopic (29Si and 18O) tracing of glass alteration mechanismscitations
- 2010Wear property of ductile iron locally reinforced with Cr-containing steel insertscitations
Places of action
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article
Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltages
Abstract
<jats:title>Abstract</jats:title><jats:p>Currently, Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open‐circuit voltage, which is the focus of the work presented here. Polycrystalline thin‐film Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature‐dependent current–voltage characteristics. It is found that a post‐deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> absorber. The increased activation energy is accompanied by an increased photoluminescence yield, that is, reduced non‐radiative recombination. Finished Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> solar cell devices reach open‐circuit voltages as high as 485 mV. Contrarily, the short‐circuit current density of these devices is limiting the efficiency after the post‐deposition annealing. It is shown that atomic layer‐deposited intermediate buffer layers such as TiO<jats:sub>2</jats:sub> or Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> can pave the way for overcoming this limitation.</jats:p>