| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Frégnaux, Mathieu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cellscitations
- 2024Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cellscitations
- 2024Breaking 1.7 V Open Circuit Voltage in Large Area Transparent Perovskite Solar Cells Using Interfaces Passivationcitations
- 2024Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskitescitations
- 2024Breaking 1.7 V Open Circuit Voltage in Large Area Transparent Perovskite Solar Cells Using Interfaces Passivationcitations
- 2024In situ evaluation of the strontium vandate oxide reactivity by NAP-XPS
- 2023Influence of X-Ray Irradiation During Photoemission Studies on Halide Perovskite-Based Devicescitations
- 2023Elucidating Interfacial Limitations Induced by Tin Oxide Electron Selective Layer Grown by Atomic Layer Deposition in N−I−P Perovskite-Based Solar Cellscitations
- 2023Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation.citations
- 2023Formation and Etching of the Insulating Sr‐Rich V 5+ Phase at the Metallic SrVO 3 Surface Revealed by Operando XAS Spectroscopy Characterizationscitations
- 2023Formation and Etching of the Insulating Sr‐Rich V<sup>5+</sup> Phase at the Metallic SrVO<sub>3</sub> Surface Revealed by Operando XAS Spectroscopy Characterizationscitations
- 2022Photocatalytic nanocomposite anatase–rutile TiO2 coatingcitations
- 2022Photocatalytic nanocomposite anatase–rutile TiO2 coatingcitations
- 2022On the equilibrium electrostatic potential and light-induced charge redistribution in halide perovskite structurescitations
- 2022Oxide thin film depth profiling: interest and limitations of argon sputtering for photoemission spectroscopy
- 2021Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cellscitations
- 2021XPS monitoring of SrVO3 thin films from demixing to air ageing: The asset of treatment in watercitations
- 2021Highly Transparent and Conductive Indium‐Free Vanadates Crystallized at Reduced Temperature on Glass Using a 2D Transparent Nanosheet Seed Layercitations
- 2020Improving the Activity of Fe/C/N ORR Electrocatalyst Using Double Ammonia Promoted CO2 Laser Pyrolysis
- 2020Three dimensional resistance mapping of self-organized Sr3V2O8 nanorods on metallic perovskite SrVO3 matrixcitations
- 2020Transfer of Epitaxial SrTiO 3 Nanothick Layers Using Water-Soluble Sacrificial Perovskite Oxidescitations
- 2018Synthesis and characterization of Carbon/Nitrogen/Iron based nanoparticles by laser pyrolysis as non-noble metal electrocatalysts for oxygen reductioncitations
- 2018The Evaluation of the Perturbations Induced By Ionic Bombardment on Surfaces: A Challengefor Interfacial Electrochemistry
- 2017Direct Writing on Copper Ion Doped Silica Films by Electrogeneration of Metallic Microstructurescitations
- 2014Ion beam synthesis of embedded III‐As nanocrystals in silicon substratecitations
Places of action
| Organizations | Location | People |
|---|
article
On the equilibrium electrostatic potential and light-induced charge redistribution in halide perovskite structures
Abstract
Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and investigated a lateral device, based on methylammonium lead iodide (MAPbI3) in which the p-i-n heterojunction develops in the horizontal direction. Our research suggests that the effective doping level in the MAPbI3 film should be very low, below 1012 cm−3. Along the vertical direction, this doping level is not enough to screen the electric field of the buried heterojunction with the SCTL. The perovskite work function is therefore affected by the work function of the SCTL underneath. From drift-diffusion simulations, we show that intrinsic perovskite-SCTL structures develop mV range surface photovoltages (SPVs) under continuous illumination. However, perovskite-SCTL structures can develop SPVs of hundreds of mV, as confirmed by our measurements. We therefore analyzed the compatibility between low doping and low defect densities in the perovskite layer and such high SPV values using numerical modeling. It is shown that these high SPV values could originate from electronic processes due to large band offsets in the buried perovskite-SCTL heterojunctions, or at the SCTL-transparent conductive oxide (TCO) buried heterojunction. However, such electronic processes can hardly explain the long SPV persistence after switching off the illumination.