Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Universidad Complutense de Madrid

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (4/4 displayed)

  • 2024Analysis of the Performance of mc-Si and CdTe Modules Under Soiling Conditionscitations
  • 2022Optimization of N-PERT Solar Cell under Atacama Desert Solar Spectrum3citations
  • 2020Interface analysis of Ag/n‐type Si contacts in n‐type PERT solar cells12citations
  • 2020An Analytical–Experimental Approach to Quantifying the Effects of Static Magnetic Fields for Cell Culture Applications10citations

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Chart of shared publication
López Rodríguez, Gabriel
1 / 1 shared
Marzo, Aitor
2 / 3 shared
Llaguno, Martha Isabel
1 / 1 shared
Ivorra, Benjamin Pierre Paul
1 / 1 shared
Ruiz Reina, Emilio
1 / 2 shared
Campo, Valeria Del
2 / 3 shared
Ferrández, Miriam Ruiz
1 / 1 shared
Portillo, Carlos
1 / 2 shared
Rudolph, Dominik
1 / 5 shared
Lossen, Jan
1 / 6 shared
Henríquez, Ricardo
1 / 2 shared
Adrian, Adrian
1 / 2 shared
Flores, Marcos
1 / 2 shared
Corrales, Tomas P.
1 / 2 shared
Sierpe, Rodrigo
1 / 1 shared
Rodríguez, Sebastián
1 / 1 shared
Maureira, Alejandro
1 / 1 shared
Zapata, Manuel
1 / 1 shared
Serrano, Génesis
1 / 1 shared
Miranda-Ostojic, Carol
1 / 1 shared
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2024
2022
2020

Co-Authors (by relevance)

  • López Rodríguez, Gabriel
  • Marzo, Aitor
  • Llaguno, Martha Isabel
  • Ivorra, Benjamin Pierre Paul
  • Ruiz Reina, Emilio
  • Campo, Valeria Del
  • Ferrández, Miriam Ruiz
  • Portillo, Carlos
  • Rudolph, Dominik
  • Lossen, Jan
  • Henríquez, Ricardo
  • Adrian, Adrian
  • Flores, Marcos
  • Corrales, Tomas P.
  • Sierpe, Rodrigo
  • Rodríguez, Sebastián
  • Maureira, Alejandro
  • Zapata, Manuel
  • Serrano, Génesis
  • Miranda-Ostojic, Carol
OrganizationsLocationPeople

article

Interface analysis of Ag/n‐type Si contacts in n‐type PERT solar cells

  • Portillo, Carlos
  • Rudolph, Dominik
  • Lossen, Jan
  • Henríquez, Ricardo
  • Adrian, Adrian
  • Ferrada, Pablo
  • Flores, Marcos
  • Campo, Valeria Del
  • Corrales, Tomas P.
  • Sierpe, Rodrigo
Abstract

<jats:title>Abstract</jats:title><jats:p>To increase efficiencies of bifacial solar cells, emitter, back surface field (BSF), and metal patterns must be optimized. We study the influence of paste volume, through multiple prints, of two silver pastes on the contact formation at the rear side of n‐type passivated emitter and rear totally diffused (n‐PERT) solar cells with two BSF doping profiles. Differences in fingers' electrical properties were found between pastes. Contact resistivity shows a relative difference of 27.6%, partially explained by changes in the silver crystallites formation at the Ag/Si interface and in the crystallites' penetration depth. Variations in crystallites formation and penetration between pastes can reach 38.4% and 48.8%, respectively. Line resistance shows a difference between pastes, appearing as the main cause of an absolute efficiency difference of 2.9%. Fingers' structural and electrical properties are modified by increasing the paste volume. Microstructure analysis reveals that additional metallic printing does not only increase line cross sectional area but also increases the formation of silver crystallites, which can reach a relative increment of 23.9% between first and second prints. Further printing does not necessarily decrease contact resistivity, but reduces line resistance in up to 94.9%, which results in an absolute efficiency increase of 2.2%. In addition, the higher presence of silver oxide in the finger is related to a higher efficiency in the formation of silver crystallites. Finally, BSF doping has an influence in the open circuit voltage, short circuit current density, and contact resistivity, with differences that can reach 8.7 mV, 0.2 mA/cm<jats:sup>2</jats:sup>, and 6.1 mΩcm<jats:sup>2</jats:sup>, respectively, depending on paste and number of prints.</jats:p>

Topics
  • density
  • impedance spectroscopy
  • microstructure
  • surface
  • silver
  • resistivity
  • current density